JOURNAL OF LIGHT INDUSTRY

CN 41-1437/TS  ISSN 2096-1553

具有择优取向的GaN粉末的制备与性能研究

康利平 王伶俐 王海燕 张晓冬 王永强

康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
引用本文: 康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
Citation: KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006

具有择优取向的GaN粉末的制备与性能研究

  • 基金项目: 国家自然科学基金项目(51302250);郑州市科技局前沿科技研究与发展项目(141PQYJS552);郑州轻工业学院校内科研基金项目(2013XJJ010)

  • 中图分类号: TB34

Research on preparation and performance of Gallium nitride powder with preferred orientation

  • Received Date: 2017-03-01
    Available Online: 2017-09-15

    CLC number: TB34

  • 摘要: 采用管式炉通以流动氨气煅烧β-Ga2O3的方法制备六方纤锌矿GaN,利用XRD,SEM,TEM对所制备的GaN的结构、形貌进行表征和分析,使用荧光光度计采集GaN的光致发光光谱进行发光性能研究.结果表明,GaN具有(002)择优取向,其颗粒外形和尺寸均与原料相似,系由几十纳米的晶片团聚而成的棒状颗粒所组成;GaN的近带边发射峰为346 nm(3.584 eV),相比较块材的近带边发射峰有19 nm(187 meV)的蓝移.
    1. [1]

      BERHANE A M,JEONG K Y,BODROG Z,et al.Bright room-temperature single-photon emission from defects in gallium nitride[J].Advanced Materials,2017,29(12):1605092.

    2. [2]

      POLYAKOV A Y,SMIRNOV N B,YAKIMOV E B,et al.Electrical,optical,and structural properties of GaN films prepared by hydride vapor phase epitaxy[J].Journal of Alloys and Compounds,2014,617:200.

    3. [3]

      SCHOLZ F,MEISCH T,CALIEBE M,et al.Growth and doping of semipolar GaN grown on patterned sapphire substrates[J].Journal of Crystal Growth,2014,405:97.

    4. [4]

      MOTAMEDI P,DALILI N,CADIEN K.A route to low temperature growth of single crystal GaN on sapphire[J].Journal of Materials Chemistry C,2015,3(28):7428.

    5. [5]

      LIOU J K,CHEN C C,CHOU P C,et al.Implementation of a high-performance GaN-based light-emitting diode grown on a nanocomb-shaped patterned sapphire substrate[J].IEEE Journal of Quantum Electronics,2014,50(12):973.

    6. [6]

      ZHANG H,CHEN Y,FU L,et al.Synthesis,thermal stability,and photocatalytic activity of nanocrystalline gallium nitride via the reaction of Ga2O3 and NH4Cl at low temperature[J].Journal of Alloys and Compounds,2010,499(2):269.

    7. [7]

      DRYGAS M,JANIK J F.Modeling porosity of high surface area nanopowders of the gallium nitride GaN semiconductor[J].Materials Chemistry and Physics,2012,133(2):932.

    8. [8]

      JUNG W S.Reaction mechanism of the nitridation of α-gallium oxide to gallium nitride under a flow of ammonia[J].Materials Letters,2006,60(24):2954.

    9. [9]

      HAN C B,HE C,LI X J.Near-infrared light emission from a GaN/Si nanoheterostructure array[J].Advanced Materials,2011,23(41):4811.

    10. [10]

      PRESCHILLA A N,MAJOR S,KUMAR N,et al.Nanocrystalline gallium nitride thin films[J].Applied Physics Letters,2000,77(12):1861.

    11. [11]

      YADAV B S,SINGH S,GANGULI T,et al.Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target[J].Thin Solid Films,2008,517(2):488.

    12. [12]

      JUNG W S,MIN B K.Synthesis of gallium nitride powders and nanowires from gallium oxyhydroxide under a flow of ammonia[J].Materials Letters,2004,58(24):3058.

    13. [13]

      ZHONG W,LUO H,HUA S,et al.Anionic coordination polyhedron growth units and crystal morphology[J].Journal of Synthetic Crystals,2004,33(4):475.

    14. [14]

      ZHAO Z Y,LI XG W S R.Study on the priority growth of (001) plane of hexagonal magnesium hydroxide[J].Journal of Synthetic Crystals,2014,43(7):1611.

    15. [15]

      GARCIA R,HIRATA G A,THOMAS A C,et al.Structure and luminescence of nanocrystalline gallium nitride synthesized by a novel polymer pyrolysis route[J].Optical Materials,2006,29(1):19.

    16. [16]

      XU S R,HAO Y,ZHANG J C,et al.Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition[J].Journal of Crystal Growth,2010,312(23):3521.

    17. [17]

      KUCHEYEV S O,TOTH M,PHILLIPS M R,et al.Chemical origin of the yellow luminescence in GaN[J].Journal of Applied Physics,2002,91(9):5867.

    18. [18]

      ARMITAGE R,HONG W,YANG Q,et al.Contributions from gallium vacancies and carbon-related defects to the "yellow luminescence" in GaN[J].Applied Physics Letters,2003,82(20):3457.

    19. [19]

      GVDER H S,ABAY B,EFEOGLU H,et al.Radiative recombination centers in GaTe[J].Bulgarian Journal of Physics,2000,27(2):72.

  • 加载中
计量
  • PDF下载量:  125
  • 文章访问数:  8242
  • 引证文献数: 0
文章相关
  • 收稿日期:  2017-03-01
  • 刊出日期:  2017-09-15
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索
康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
引用本文: 康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
Citation: KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006

具有择优取向的GaN粉末的制备与性能研究

  • 郑州轻工业学院 物理与电子工程学院, 河南 郑州 450002
基金项目:  国家自然科学基金项目(51302250);郑州市科技局前沿科技研究与发展项目(141PQYJS552);郑州轻工业学院校内科研基金项目(2013XJJ010)

摘要: 采用管式炉通以流动氨气煅烧β-Ga2O3的方法制备六方纤锌矿GaN,利用XRD,SEM,TEM对所制备的GaN的结构、形貌进行表征和分析,使用荧光光度计采集GaN的光致发光光谱进行发光性能研究.结果表明,GaN具有(002)择优取向,其颗粒外形和尺寸均与原料相似,系由几十纳米的晶片团聚而成的棒状颗粒所组成;GaN的近带边发射峰为346 nm(3.584 eV),相比较块材的近带边发射峰有19 nm(187 meV)的蓝移.

English Abstract

参考文献 (19)

目录

/

返回文章