JOURNAL OF LIGHT INDUSTRY

CN 41-1437/TS  ISSN 2096-1553

量子尺寸效应对InGaN/GaN量子点中的类氢杂质态的影响

蒋逢春 ,  苏玉玲 ,  李俊玉

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蒋逢春, 苏玉玲, 李俊玉. 量子尺寸效应对InGaN/GaN量子点中的类氢杂质态的影响[J]. 轻工学报, 2012, 27(2): 102-104. doi: 10.3969/j.issn.1004-1478.2012.02.026
引用本文: 蒋逢春, 苏玉玲, 李俊玉. 量子尺寸效应对InGaN/GaN量子点中的类氢杂质态的影响[J]. 轻工学报, 2012, 27(2): 102-104. doi: 10.3969/j.issn.1004-1478.2012.02.026
shu
JIANG Feng-chun, SU Yu-ling and LI Jun-yu. Quantum size effect on hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot[J]. Journal of Light Industry, 2012, 27(2): 102-104. doi: 10.3969/j.issn.1004-1478.2012.02.026
Citation: JIANG Feng-chun, SU Yu-ling and LI Jun-yu. Quantum size effect on hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot[J]. Journal of Light Industry, 2012, 27(2): 102-104. doi: 10.3969/j.issn.1004-1478.2012.02.026
shu

量子尺寸效应对InGaN/GaN量子点中的类氢杂质态的影响

  • 郑州轻工业学院 技术物理系, 河南 郑州 450002

  • 基金项目: 郑州轻工业学院重大预研基金项目(2009XYYJJ006)
    河南省教育厅自然科学研究计划项目(2011A140028)
    河南省基础与前沿技术研究计划项目(102300410108)

  • 中图分类号: O471.4

Quantum size effect on hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot

  • Dept. of Tech. Phy., Zhengzhou Univ. of Light Ind., Zhengzhou 450002, China

  • Received Date: 2011-11-14
    Available Online: 2012-03-15

    CLC number: O471.4

  • 摘要: 在有效质量近似下,运用变分法研究了量子尺寸效应对闪锌矿InGaN/GaN量子点中类氢杂质的施主束缚能的影响.数值结果显示,类氢杂质的施主束缚能在很大程度上依赖于杂质位置和量子点结构参数,当杂质位于量子点中心时,施主束缚能最大;当量子点尺寸增加时,位于该量子点任一位置处的杂质束缚能均降低.
    Abstract: Based on the effective-mass approximation,the quantum size effect on binding energy of hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot was investigated by means of variational method.Numerical results showed that the donor binding energy of hydorgenic impurity depended on the impurity position and quantum dot structure in a large extent.The donor binding energy of impurity located at the center of quantum dot was the largest.Impurity donor binding energy decreased when quantum dot height and radius increase for any impurity position.
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  • 收稿日期:  2011-11-14
  • 刊出日期:  2012-03-15
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蒋逢春, 苏玉玲, 李俊玉. 量子尺寸效应对InGaN/GaN量子点中的类氢杂质态的影响[J]. 轻工学报, 2012, 27(2): 102-104. doi: 10.3969/j.issn.1004-1478.2012.02.026
引用本文: 蒋逢春, 苏玉玲, 李俊玉. 量子尺寸效应对InGaN/GaN量子点中的类氢杂质态的影响[J]. 轻工学报, 2012, 27(2): 102-104. doi: 10.3969/j.issn.1004-1478.2012.02.026
shu
JIANG Feng-chun, SU Yu-ling and LI Jun-yu. Quantum size effect on hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot[J]. Journal of Light Industry, 2012, 27(2): 102-104. doi: 10.3969/j.issn.1004-1478.2012.02.026
Citation: JIANG Feng-chun, SU Yu-ling and LI Jun-yu. Quantum size effect on hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot[J]. Journal of Light Industry, 2012, 27(2): 102-104. doi: 10.3969/j.issn.1004-1478.2012.02.026
shu

量子尺寸效应对InGaN/GaN量子点中的类氢杂质态的影响

  • 郑州轻工业学院 技术物理系, 河南 郑州 450002
  • 收稿日期: 2011-11-14
  • 网络出版日期: 2012-03-15
基金项目:  郑州轻工业学院重大预研基金项目(2009XYYJJ006)河南省教育厅自然科学研究计划项目(2011A140028)河南省基础与前沿技术研究计划项目(102300410108)

摘要: 在有效质量近似下,运用变分法研究了量子尺寸效应对闪锌矿InGaN/GaN量子点中类氢杂质的施主束缚能的影响.数值结果显示,类氢杂质的施主束缚能在很大程度上依赖于杂质位置和量子点结构参数,当杂质位于量子点中心时,施主束缚能最大;当量子点尺寸增加时,位于该量子点任一位置处的杂质束缚能均降低.

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