La2Hf2O7栅介质薄膜的制备和结构表征

李俊玉; 张焕君

doi:10.3969/j.issn.2096-1553.2016.3.015

May 2016

Article Contents

LI Jun-yu and ZHANG Huan-jun. Preparation and characterization of La2Hf2O7 gate dielectric films[J]. Journal of Light Industry, 2016, 31(3): 104-108. doi: 10.3969/j.issn.2096-1553.2016.3.015

Citation: LI Jun-yu and ZHANG Huan-jun. Preparation and characterization of La2Hf2O7 gate dielectric films[J]. Journal of Light Industry, 2016, 31(3): 104-108. doi: 10.3969/j.issn.2096-1553.2016.3.015 shu

Preparation and characterization of La₂Hf₂O₇ gate dielectric films

School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China

Received Date: 2016-01-20
Available Online: 2016-05-15

Abstract

La₂Hf₂O₇ gate dielectric films with high dielectric constants have been grown on silicon (100) substrates by pulsed laser deposition.The structure of the films and the interface layer were studied by using X-ray diffraction (XRD), synchrotron X-ray reflectivity (XRR), and X-ray photoelectron spectroscopy (XPS). X-ray diffraction demonstrated that the as-grown films were amorphous and crystallized into La₂Hf₂O₇ thin films after 1 000℃ annealing. Silicon oxide and silicate interlayer were observed between the Si substrate and as-grown film. The composition and thickness of the interlayer greatly depended on the grown condition, and annealing could effectively eliminate SiO_x formation and improve the dielectric property of La₂Hf₂O₇ gate dielectric films.
- pulsed laser deposition technology,
- La₂Hf₂O₇ gate dielectric film,
- dielectric property
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