IGBT现场失效短路结温测量方法研究
Research on short-circuit junction temperature measurement method of IGBT field failure
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摘要: 针对IGBT存在的响应速度慢、异质结构导致的热传导系数不均衡等问题，在对IGBT失效机理和现有结温测量模型研究的基础上，提出一种基于热积累的热电模型，以实时准确地测量IGBT结温.该方法在能量平衡的基础上，将IGBT温度的测量转换为测量IGBT某一点的温度，很好地避开了IGBT异质结构问题.Matlab仿真和实验结果表明，二者温度曲线有较好的拟合度，验证了该方法的可行性.Abstract: To overcome the problems of slow response speed and uneven thermal conductivity caused by the heterogeneity structure which exits in recent junction temperature measurements,a thermoelectric model based on heat accumulation was proposed to accurately measure the IGBT junction temperature in real time,based on the study of IGBT failure mechanism and the existing junction temperature measurement models.The IGBT temperature measurement was converted to measure the temperature of a certain point of the IGBT based on the energy balance to avoid the heterogeneity structure problem of IGBT.Matlab simulation and experimental results showed that the two temperature curves have a good degree of fit, verified the feasibility of the proposed method.
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