JOURNAL OF LIGHT INDUSTRY

CN 41-1437/TS  ISSN 2096-1553

Volume 32 Issue 4
July 2017
Article Contents
DOU Zhi-feng, ZHAI Chao-wei, CUI Guang-zhao and et al. Research on short-circuit junction temperature measurement method of IGBT field failure[J]. Journal of Light Industry, 2017, 32(4): 73-80. doi: 10.3969/j.issn.2096-1553.2017.4.011
Citation: DOU Zhi-feng, ZHAI Chao-wei, CUI Guang-zhao and et al. Research on short-circuit junction temperature measurement method of IGBT field failure[J]. Journal of Light Industry, 2017, 32(4): 73-80. doi: 10.3969/j.issn.2096-1553.2017.4.011 shu

Research on short-circuit junction temperature measurement method of IGBT field failure

  • Received Date: 2016-06-13
    Accepted Date: 2016-12-06
    Available Online: 2017-07-15
  • To overcome the problems of slow response speed and uneven thermal conductivity caused by the heterogeneity structure which exits in recent junction temperature measurements,a thermoelectric model based on heat accumulation was proposed to accurately measure the IGBT junction temperature in real time,based on the study of IGBT failure mechanism and the existing junction temperature measurement models.The IGBT temperature measurement was converted to measure the temperature of a certain point of the IGBT based on the energy balance to avoid the heterogeneity structure problem of IGBT.Matlab simulation and experimental results showed that the two temperature curves have a good degree of fit, verified the feasibility of the proposed method.
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