YANG S,BRYANT A,MAWBY P,et al.An industry-based survey of reliability in power electronicconverters[J].IEEE Transactions on Industry Applications,2011,47(3): 1441.
SONG Y T,WANG B S.Survey on reliability of power electronic systems[J].IEEE Transactions on Power Electronics,2013,28(1):591.
徐帅,杨欢,王田刚,等.电力电子变换器可靠性研究[J].北京交通大学学报(自然科学版),2015,39(5): 125.
王兆安,刘进军.电力电子技术[M].北京:机械工业出版社,2008.
WU R,BLAABJERG F,WANG H,et al.Catastrophic failure and fault-tolerant design of IGBT power electronic converters—An overview[C]//IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society.Piscataway:IEEE Conference Publications,2013: 507.
LEFEBVRE S,KHATIR Z,SAINT-EVE F,et al.Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions[J].IEEE Transactions on Electron Devices,2005,52(2): 276.
BENMANSOUR A,AZZOPARDI S,MARTIN J C,et al,Failure mechanisms of trench IGBT under various short-circuit conditions[C]//2007 IEEE Power Electronics Specialists Conference.Piscataway:IEEE Conference Publications,2007: 1923.
AMMOUS A,AMMOUS K,MOREL H,et al.Electrothermal modeling of IGBTs: application to short-circuit conditions [J].IEEE Transactions on Power Electronics,2000,15(4): 778.
WANG Z Q,SHI X J,TOLBERT L M,et al.Temperature-dependent short-circuit capability of silicon carbide power MOSFETs[J].IEEE Transactions on Power Electronics,2016,31(2): 1555.
BREGLIO G,IRACE A,NAPOL E,et al.Experimental detection and numerical validation of different failure mechanisms in IGBTs during unclamped inductive switching[J].IEEE Transactions on Electron Devices,2013,60(2): 563.
李森.大功率变流器中快速熔断器的设计分析与选型[D].武汉:华中科技大学,2013.
陈明,胡安,唐勇,等.IGBT结温及温度场分布探测研究[J].电力电子技术,2011(7):130.
TSENG H K,WU M L.Electro-thermal-mechanical modeling of wire bonding failures in IGBT[C]//2013 8th International Microsystems,Packaging,Assembly and Circuits Technology Conference (IMPACT).Piscataway:IEEE Conference Publications,2013: 152.