JOURNAL OF LIGHT INDUSTRY

CN 41-1437/TS  ISSN 2096-1553

具有择优取向的GaN粉末的制备与性能研究

康利平 ,  王伶俐 ,  王海燕 ,  张晓冬 ,  王永强

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康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
引用本文: 康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
shu
KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
Citation: KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
shu

具有择优取向的GaN粉末的制备与性能研究

  • 郑州轻工业学院 物理与电子工程学院, 河南 郑州 450002

  • 基金项目: 国家自然科学基金项目（51302250）；郑州市科技局前沿科技研究与发展项目（141PQYJS552）；郑州轻工业学院校内科研基金项目（2013XJJ010）

  • 中图分类号: TB34

Research on preparation and performance of Gallium nitride powder with preferred orientation

  • College of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China

  • Received Date: 2017-03-01
    Available Online: 2017-09-15

    CLC number: TB34

  • 摘要: 采用管式炉通以流动氨气煅烧β-Ga2O3的方法制备六方纤锌矿GaN，利用XRD，SEM，TEM对所制备的GaN的结构、形貌进行表征和分析，使用荧光光度计采集GaN的光致发光光谱进行发光性能研究.结果表明，GaN具有（002）择优取向，其颗粒外形和尺寸均与原料相似，系由几十纳米的晶片团聚而成的棒状颗粒所组成；GaN的近带边发射峰为346 nm（3.584 eV），相比较块材的近带边发射峰有19 nm（187 meV）的蓝移.
    Abstract: The hexagonal wurtzite Gallium nitride(GaN) was prepared by calcining β gallium oxide(β-Ga2O3) in flowing ammonia. The XRD, SEM and TEM were employed to investigate the structure and morphology. The photoluminescence (PL) spectroscopy was used to collect photoluminescence spectroscopy of GaN perform the luminous property. The measurement results revealed that the obtained GaN had preferred orientation of (002), and the rod shape and grain size of GaN powders were similar to those of raw gallium oxide which were agglomerates of tens nanometers flake crystallites. The near-edge emission at 346 nm(3.584 eV) of Gallium nitride powders had a blue shift of 19 nm(187 meV) than that of bulk GaN material.
    1. [1]

      BERHANE A M,JEONG K Y,BODROG Z,et al.Bright room-temperature single-photon emission from defects in gallium nitride[J].Advanced Materials,2017,29(12):1605092.

    2. [2]

      POLYAKOV A Y,SMIRNOV N B,YAKIMOV E B,et al.Electrical,optical,and structural properties of GaN films prepared by hydride vapor phase epitaxy[J].Journal of Alloys and Compounds,2014,617:200.

    3. [3]

      SCHOLZ F,MEISCH T,CALIEBE M,et al.Growth and doping of semipolar GaN grown on patterned sapphire substrates[J].Journal of Crystal Growth,2014,405:97.

    4. [4]

      MOTAMEDI P,DALILI N,CADIEN K.A route to low temperature growth of single crystal GaN on sapphire[J].Journal of Materials Chemistry C,2015,3(28):7428.

    5. [5]

      LIOU J K,CHEN C C,CHOU P C,et al.Implementation of a high-performance GaN-based light-emitting diode grown on a nanocomb-shaped patterned sapphire substrate[J].IEEE Journal of Quantum Electronics,2014,50(12):973.

    6. [6]

      ZHANG H,CHEN Y,FU L,et al.Synthesis,thermal stability,and photocatalytic activity of nanocrystalline gallium nitride via the reaction of Ga2O3 and NH4Cl at low temperature[J].Journal of Alloys and Compounds,2010,499(2):269.

    7. [7]

      DRYGAS M,JANIK J F.Modeling porosity of high surface area nanopowders of the gallium nitride GaN semiconductor[J].Materials Chemistry and Physics,2012,133(2):932.

    8. [8]

      JUNG W S.Reaction mechanism of the nitridation of α-gallium oxide to gallium nitride under a flow of ammonia[J].Materials Letters,2006,60(24):2954.

    9. [9]

      HAN C B,HE C,LI X J.Near-infrared light emission from a GaN/Si nanoheterostructure array[J].Advanced Materials,2011,23(41):4811.

    10. [10]

      PRESCHILLA A N,MAJOR S,KUMAR N,et al.Nanocrystalline gallium nitride thin films[J].Applied Physics Letters,2000,77(12):1861.

    11. [11]

      YADAV B S,SINGH S,GANGULI T,et al.Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target[J].Thin Solid Films,2008,517(2):488.

    12. [12]

      JUNG W S,MIN B K.Synthesis of gallium nitride powders and nanowires from gallium oxyhydroxide under a flow of ammonia[J].Materials Letters,2004,58(24):3058.

    13. [13]

      ZHONG W,LUO H,HUA S,et al.Anionic coordination polyhedron growth units and crystal morphology[J].Journal of Synthetic Crystals,2004,33(4):475.

    14. [14]

      ZHAO Z Y,LI XG W S R.Study on the priority growth of (001) plane of hexagonal magnesium hydroxide[J].Journal of Synthetic Crystals,2014,43(7):1611.

    15. [15]

      GARCIA R,HIRATA G A,THOMAS A C,et al.Structure and luminescence of nanocrystalline gallium nitride synthesized by a novel polymer pyrolysis route[J].Optical Materials,2006,29(1):19.

    16. [16]

      XU S R,HAO Y,ZHANG J C,et al.Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition[J].Journal of Crystal Growth,2010,312(23):3521.

    17. [17]

      KUCHEYEV S O,TOTH M,PHILLIPS M R,et al.Chemical origin of the yellow luminescence in GaN[J].Journal of Applied Physics,2002,91(9):5867.

    18. [18]

      ARMITAGE R,HONG W,YANG Q,et al.Contributions from gallium vacancies and carbon-related defects to the "yellow luminescence" in GaN[J].Applied Physics Letters,2003,82(20):3457.

    19. [19]

      GVDER H S,ABAY B,EFEOGLU H,et al.Radiative recombination centers in GaTe[J].Bulgarian Journal of Physics,2000,27(2):72.

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  • 收稿日期:  2017-03-01
  • 刊出日期:  2017-09-15
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康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
引用本文: 康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
shu
KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
Citation: KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
shu

具有择优取向的GaN粉末的制备与性能研究

  • 郑州轻工业学院 物理与电子工程学院, 河南 郑州 450002
  • 收稿日期: 2017-03-01
  • 网络出版日期: 2017-09-15
基金项目:  国家自然科学基金项目（51302250）；郑州市科技局前沿科技研究与发展项目（141PQYJS552）；郑州轻工业学院校内科研基金项目（2013XJJ010）

摘要: 采用管式炉通以流动氨气煅烧β-Ga2O3的方法制备六方纤锌矿GaN，利用XRD，SEM，TEM对所制备的GaN的结构、形貌进行表征和分析，使用荧光光度计采集GaN的光致发光光谱进行发光性能研究.结果表明，GaN具有（002）择优取向，其颗粒外形和尺寸均与原料相似，系由几十纳米的晶片团聚而成的棒状颗粒所组成；GaN的近带边发射峰为346 nm（3.584 eV），相比较块材的近带边发射峰有19 nm（187 meV）的蓝移.

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