JOURNAL OF LIGHT INDUSTRY

CN 41-1437/TS  ISSN 2096-1553

Volume 33 Issue 6
November 2018
Article Contents
DOU Zhifeng, JIN Yuxiang and GUO Xinfei. Research on transient short-circuit failure analysis and finite element thermoelectric coupling model of IGBT[J]. Journal of Light Industry, 2018, 33(6): 101-108. doi: 10.3969/j.issn.2096-1553.2018.06.012
Citation: DOU Zhifeng, JIN Yuxiang and GUO Xinfei. Research on transient short-circuit failure analysis and finite element thermoelectric coupling model of IGBT[J]. Journal of Light Industry, 2018, 33(6): 101-108. doi: 10.3969/j.issn.2096-1553.2018.06.012 shu

Research on transient short-circuit failure analysis and finite element thermoelectric coupling model of IGBT

  • Received Date: 2018-07-06
  • Aiming at the problem that the traditional thermal network model is not suitable for IGBT short-circuit junction temperature measurement, based on the analysis of the failure mechanism of IGBT in the case of transient short-circuit, the energy value of IGBT short-circuit failure was defined.The evolution law of the critical energy value of IGBT under different initial temperature and different bus voltage was found, and finite element thermoelectric coupling model was established. The simulation results showed that with the increase of DC bus voltage, initial temperature and current density, the short-circuit maintenance time and critical energy value of IGBT would be greatly reduced while the critical temperature point of IGBT failure was independent of the initial temperature; the heat transfer before IGBT failure only reached the solder layer during the short-circuit process, and the maximum temperature point of IGBT was distributed at the boundary of the depleted layer at the instant of short-circuit.
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