JOURNAL OF LIGHT INDUSTRY

CN 41-1437/TS  ISSN 2096-1553

具有择优取向的GaN粉末的制备与性能研究

康利平 ,  王伶俐 ,  王海燕 ,  张晓冬 ,  王永强

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康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
引用本文: 康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
shu
KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
Citation: KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
shu

具有择优取向的GaN粉末的制备与性能研究

  • 郑州轻工业学院 物理与电子工程学院, 河南 郑州 450002

  • 基金项目: 国家自然科学基金项目（51302250）；郑州市科技局前沿科技研究与发展项目（141PQYJS552）；郑州轻工业学院校内科研基金项目（2013XJJ010）

  • 中图分类号: TB34

Research on preparation and performance of Gallium nitride powder with preferred orientation

  • College of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China

  • Received Date: 2017-03-01
    Available Online: 2017-09-15

    CLC number: TB34

  • 摘要: 采用管式炉通以流动氨气煅烧β-Ga2O3的方法制备六方纤锌矿GaN，利用XRD，SEM，TEM对所制备的GaN的结构、形貌进行表征和分析，使用荧光光度计采集GaN的光致发光光谱进行发光性能研究.结果表明，GaN具有（002）择优取向，其颗粒外形和尺寸均与原料相似，系由几十纳米的晶片团聚而成的棒状颗粒所组成；GaN的近带边发射峰为346 nm（3.584 eV），相比较块材的近带边发射峰有19 nm（187 meV）的蓝移.
    Abstract: The hexagonal wurtzite Gallium nitride(GaN) was prepared by calcining β gallium oxide(β-Ga2O3) in flowing ammonia. The XRD, SEM and TEM were employed to investigate the structure and morphology. The photoluminescence (PL) spectroscopy was used to collect photoluminescence spectroscopy of GaN perform the luminous property. The measurement results revealed that the obtained GaN had preferred orientation of (002), and the rod shape and grain size of GaN powders were similar to those of raw gallium oxide which were agglomerates of tens nanometers flake crystallites. The near-edge emission at 346 nm(3.584 eV) of Gallium nitride powders had a blue shift of 19 nm(187 meV) than that of bulk GaN material.
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  • 收稿日期:  2017-03-01
  • 刊出日期:  2017-09-15
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康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
引用本文: 康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
shu
KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
Citation: KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
shu

具有择优取向的GaN粉末的制备与性能研究

  • 郑州轻工业学院 物理与电子工程学院, 河南 郑州 450002
  • 收稿日期: 2017-03-01
  • 网络出版日期: 2017-09-15
基金项目:  国家自然科学基金项目（51302250）；郑州市科技局前沿科技研究与发展项目（141PQYJS552）；郑州轻工业学院校内科研基金项目（2013XJJ010）

摘要: 采用管式炉通以流动氨气煅烧β-Ga2O3的方法制备六方纤锌矿GaN，利用XRD，SEM，TEM对所制备的GaN的结构、形貌进行表征和分析，使用荧光光度计采集GaN的光致发光光谱进行发光性能研究.结果表明，GaN具有（002）择优取向，其颗粒外形和尺寸均与原料相似，系由几十纳米的晶片团聚而成的棒状颗粒所组成；GaN的近带边发射峰为346 nm（3.584 eV），相比较块材的近带边发射峰有19 nm（187 meV）的蓝移.

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