JOURNAL OF LIGHT INDUSTRY

CN 41-1437/TS  ISSN 2096-1553

含S缺陷MoS2的合成及其电化学析氢反应性能研究

孙淑敏 ,  闫堉琦 ,  侯一航 ,  周超 ,  王培远

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孙淑敏, 闫堉琦, 侯一航, 等. 含S缺陷MoS2的合成及其电化学析氢反应性能研究[J]. 轻工学报, 2021, 36(2): 55-63. doi: 10.12187/2021.02.008
引用本文: 孙淑敏, 闫堉琦, 侯一航, 等. 含S缺陷MoS2的合成及其电化学析氢反应性能研究[J]. 轻工学报, 2021, 36(2): 55-63. doi: 10.12187/2021.02.008
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SUN Shumin, YAN Yuqi, HOU Yihang, et al. Study on synthesis of sulfur-vacancy MoS2 and its electrochemical hydrogen evolution reaction performance[J]. Journal of Light Industry, 2021, 36(2): 55-63. doi: 10.12187/2021.02.008
Citation: SUN Shumin, YAN Yuqi, HOU Yihang, et al. Study on synthesis of sulfur-vacancy MoS2 and its electrochemical hydrogen evolution reaction performance[J]. Journal of Light Industry, 2021, 36(2): 55-63. doi: 10.12187/2021.02.008
shu

含S缺陷MoS2的合成及其电化学析氢反应性能研究

  • 郑州轻工业大学 材料与化学工程学院, 河南 郑州 450001

    • 作者简介: 孙淑敏(1980-),女,河南省封丘县人,郑州轻工业大学副教授,博士,主要研究方向为电化学功能材料.;

  • 基金项目: 国家自然科学基金项目（21301159）

  • 中图分类号: O631.1

Study on synthesis of sulfur-vacancy MoS2 and its electrochemical hydrogen evolution reaction performance

  • College of Material and Chemical Engineering, Zhengzhou University of Light Industry, Zhengzhou 450001, China

  • Received Date: 2020-05-12

    CLC number: O631.1

  • 摘要: 以四硫代钼酸铵和水合肼为原料，通过简单的水热合成与乙醇溶剂热处理相结合的方法制备含S缺陷的MoS2，考查其电化学析氢反应（HER）性能，并利用第一性原理密度泛函理论对其电化学性能进行理论计算，结果表明：S缺陷对MoS2的HER性能具有显著影响，经乙醇溶剂热处理24 h所得样品Eth24h-MoS2的Tafel斜率约为69 mV/dec，达到10 mA/cm2电流密度时其过电位为237 mV，相比原始MoS2均有较大幅度的降低，且具有良好的电化学稳定性；随着S缺陷密度的增加，MoS2的带隙逐渐降低，其导电性改善，缺陷位置和非缺陷位置的H吸附自由能ΔGH均随之迅速降低，且H吸附位点距离S缺陷位置越近，ΔGH越小.
    Abstract: Using ammonium tetrathiomolybdate and hydrazine hydrate as raw materials,the sulfur-vacancy containing MoS2 was synthesized by simple hydrothermal synthesis combined with subsequent ethanol solvothermal treatment,and its hydrogen evolution reaction (HER) performance was investigated.The electrochemical performance was calculated by first principle density functional theory.The results showed that sulfur-vacancy had obvious effect on HER performance of MoS2.The Tafel slope of the sample Eth24h-MoS2 obtained by ethanol solvothermal treatment for 24 h was 69 mV/dec and the overpotential was 237 mV at current density of 10 mA/cm2,which was significantly lower than that of the original MoS2,and had good electrochemical stability.With the increase of sulfur-vacancy density,the band gap of MoS2 decreased and its conductivity improved.The hydrogen adsorption free energy ΔGH of sulfur-vacancy position and sulfur-vacancy free position decreased rapidly.The closer the hydrogen adsorption site was to the sulfur-vacancy position,the smaller the ΔGH value was.
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孙淑敏, 闫堉琦, 侯一航, 等. 含S缺陷MoS2的合成及其电化学析氢反应性能研究[J]. 轻工学报, 2021, 36(2): 55-63. doi: 10.12187/2021.02.008
引用本文: 孙淑敏, 闫堉琦, 侯一航, 等. 含S缺陷MoS2的合成及其电化学析氢反应性能研究[J]. 轻工学报, 2021, 36(2): 55-63. doi: 10.12187/2021.02.008
shu
SUN Shumin, YAN Yuqi, HOU Yihang, et al. Study on synthesis of sulfur-vacancy MoS2 and its electrochemical hydrogen evolution reaction performance[J]. Journal of Light Industry, 2021, 36(2): 55-63. doi: 10.12187/2021.02.008
Citation: SUN Shumin, YAN Yuqi, HOU Yihang, et al. Study on synthesis of sulfur-vacancy MoS2 and its electrochemical hydrogen evolution reaction performance[J]. Journal of Light Industry, 2021, 36(2): 55-63. doi: 10.12187/2021.02.008
shu

含S缺陷MoS2的合成及其电化学析氢反应性能研究

    作者简介:孙淑敏(1980-),女,河南省封丘县人,郑州轻工业大学副教授,博士,主要研究方向为电化学功能材料.
  • 郑州轻工业大学 材料与化学工程学院, 河南 郑州 450001
  • 收稿日期: 2020-05-12
基金项目:  国家自然科学基金项目（21301159）

摘要: 以四硫代钼酸铵和水合肼为原料，通过简单的水热合成与乙醇溶剂热处理相结合的方法制备含S缺陷的MoS2，考查其电化学析氢反应（HER）性能，并利用第一性原理密度泛函理论对其电化学性能进行理论计算，结果表明：S缺陷对MoS2的HER性能具有显著影响，经乙醇溶剂热处理24 h所得样品Eth24h-MoS2的Tafel斜率约为69 mV/dec，达到10 mA/cm2电流密度时其过电位为237 mV，相比原始MoS2均有较大幅度的降低，且具有良好的电化学稳定性；随着S缺陷密度的增加，MoS2的带隙逐渐降低，其导电性改善，缺陷位置和非缺陷位置的H吸附自由能ΔGH均随之迅速降低，且H吸附位点距离S缺陷位置越近，ΔGH越小.

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