JOURNAL OF LIGHT INDUSTRY

CN 41-1437/TS  ISSN 2096-1553

Volume 27 Issue 2
March 2012
Article Contents
JIANG Feng-chun, SU Yu-ling and LI Jun-yu. Quantum size effect on hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot[J]. Journal of Light Industry, 2012, 27(2): 102-104. doi: 10.3969/j.issn.1004-1478.2012.02.026
Citation: JIANG Feng-chun, SU Yu-ling and LI Jun-yu. Quantum size effect on hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot[J]. Journal of Light Industry, 2012, 27(2): 102-104. doi: 10.3969/j.issn.1004-1478.2012.02.026 shu

Quantum size effect on hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot

  • Received Date: 2011-11-14
    Available Online: 2012-03-15
  • Based on the effective-mass approximation,the quantum size effect on binding energy of hydorgenic impurity states in zinc-blende InGaN/GaN quantum dot was investigated by means of variational method.Numerical results showed that the donor binding energy of hydorgenic impurity depended on the impurity position and quantum dot structure in a large extent.The donor binding energy of impurity located at the center of quantum dot was the largest.Impurity donor binding energy decreased when quantum dot height and radius increase for any impurity position.
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    1. [1]

      Zhang M,Shi J.Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects[J].J Lumines,2011,131:1908.

    2. [2]

      Bavencove A,Tourbot G,Garcia J,et al.Submicrometre resolved optical characterization of green nanowire-based light emitting diodes[J].Nanotechnology,2011,22:345705.

    3. [3]

      Xia C,Zeng Z,Wei S.Electric field effects on optical properties in zinc-blende InGaN/GaN quantum dot[J].J Lumines,2011,131:623.

    4. [4]

      Zhu S,Shi J,Zhang S,et al.Microscopic indium distribution and electron localization in zinc blende InGaN alloys and InGaN/GaN strained quantum wells[J].Appl Phys B,2011,104:3401.

    5. [5]

      Caetano C,Teles L K,Marques M.Phase stability,chemical bonds,and gap bowing of InxGa1-xN alloys:Comparison between cubic and wurtzite structures[J].Phys Rev B,2006,74:045215.

    6. [6]

      Sahin M.Photoionization cross section and intersublevel transitions in a one-and two-electron spherical quantum dot with a hydrogenic impurity[J].Phys Rev B,2008,77:045317.

    7. [7]

      Li S S,Xia J B.Binding energy of a hydrogenic donor impurity in a rectangular parallelepiped-shaped quantum dot:Quantum confinement and Stark effects[J].J Appl Phys,2007,101:093716/1.

    8. [8]

      Raigoza N,Morales A L,Montes A,et al.Stress effects on shallow-donor impurity states in symmetrical GaAs/AlxGa1-xAs double quantum wells[J].Phys Rev B,2004,69:045323.

    9. [9]

      Shi J J,Gan Z Z.Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots[J].J Appl Phys,2003,94:407.

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