JOURNAL OF LIGHT INDUSTRY

CN 41-1437/TS  ISSN 2096-1553

Ti4+掺杂Fe位对CuFeO2陶瓷材料结构和介电性能的影响

谷留停 ,  叶凤娇 ,  彭科 ,  代海洋 ,  刘德伟 ,  陈镇平

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谷留停, 叶凤娇, 彭科, 等. Ti4+掺杂Fe位对CuFeO2陶瓷材料结构和介电性能的影响[J]. 轻工学报, 2019, 34(2): 43-49. doi: 10.3969/j.issn.2096-1553.2019.02.006
引用本文: 谷留停, 叶凤娇, 彭科, 等. Ti4+掺杂Fe位对CuFeO2陶瓷材料结构和介电性能的影响[J]. 轻工学报, 2019, 34(2): 43-49. doi: 10.3969/j.issn.2096-1553.2019.02.006
shu
GU Liuting, YE Fengjiao, PENG Ke, et al. Effect of Ti4+ doping Fe site on the structure and dielectric properties for CuFeO2 ceramic material[J]. Journal of Light Industry, 2019, 34(2): 43-49. doi: 10.3969/j.issn.2096-1553.2019.02.006
Citation: GU Liuting, YE Fengjiao, PENG Ke, et al. Effect of Ti4+ doping Fe site on the structure and dielectric properties for CuFeO2 ceramic material[J]. Journal of Light Industry, 2019, 34(2): 43-49. doi: 10.3969/j.issn.2096-1553.2019.02.006
shu

Ti4+掺杂Fe位对CuFeO2陶瓷材料结构和介电性能的影响

  • 郑州轻工业大学 物理与电子工程学院, 河南 郑州 450001

    • 作者简介: 谷留停(1993-),男,河南省漯河市人,郑州轻工业大学硕士研究生,主要研究方向为多铁材料.;

  • 基金项目: 国家自然科学基金项目（11675149）；郑州轻工业学院研究生创新基金项目（2017051）

  • 中图分类号: TM271

Effect of Ti4+ doping Fe site on the structure and dielectric properties for CuFeO2 ceramic material

  • College of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450001, China

  • Received Date: 2018-11-29

    CLC number: TM271

  • 摘要: 以CuO，Fe2O3和TiO2为主要原料，采用固相反应法制备了CuFe1-xTixO2（0 ≤ x ≤ 0.08）陶瓷系列样品，对所得样品的结构、形貌和介电性能进行了表征和分析，并利用内部阻挡层模型（IBLC）对样品的微观结构与介电性能的关联规律进行了物理解释.结果表明，掺杂样品均具有单相铜铁矿结构；适量的Ti4+掺杂能够促进铜铁矿CuFeO2陶瓷样品的晶粒生长，而较大浓度的Ti4+掺杂则会对铜铁矿CuFeO2陶瓷样品的晶粒生长有明显的抑制作用，同时会破坏较为致密的晶体形貌；未掺杂及少量Ti4+掺杂（x=0.005和0.01）样品展现出室温巨介电性能，适当掺杂Ti4+可以有效提高体系的介电性能；IBLC模型可以解释Ti4+掺杂CuFeO2样品的介电机理，即CuFeO2陶瓷体系的微观形貌能明显影响体系的巨介电性能.
    Abstract: CuO,Fe2O3 and TiO2 were used as the main raw materials, and CuFe1-xTixO2 (0 ≤ x ≤ 0.08) ceramic series samples were prepared by solid state reaction method. The microstructure, morphology and dielectric properties of the samples obtained were characterized and analyzed. The internal barrier model (IBLC) was used to physically interpret the correlation between the microstructure and dielectric properties of the samples. The results showed that the doped series samples had a single-phase copper iron ore structure. Appropriate amount of Ti4+ doping could promote the grain growth of CuFeO2 ceramic samples, while the larger concentration of Ti4+ significantly inhibited the grain growth of CuFeO2 ceramic samples, and damaged the denser crystal morphology. Undoped and a small amount of Ti4+-doped (x=0.005 and 0.01) CuFeO2 samples exhibited room temperature giant dielectric properties, and proper doping of Ti4+ could effectively improve the dielectric properties of the system; IBLC model could explain the intercalation of Ti4+-doped CuFeO2 samples. The electrical mechanism, that is, the microscopic morphology of the CuFeO2 ceramic system could significantly affect the giant dielectric properties of the system.
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  • 收稿日期:  2018-11-29
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谷留停, 叶凤娇, 彭科, 等. Ti4+掺杂Fe位对CuFeO2陶瓷材料结构和介电性能的影响[J]. 轻工学报, 2019, 34(2): 43-49. doi: 10.3969/j.issn.2096-1553.2019.02.006
引用本文: 谷留停, 叶凤娇, 彭科, 等. Ti4+掺杂Fe位对CuFeO2陶瓷材料结构和介电性能的影响[J]. 轻工学报, 2019, 34(2): 43-49. doi: 10.3969/j.issn.2096-1553.2019.02.006
shu
GU Liuting, YE Fengjiao, PENG Ke, et al. Effect of Ti4+ doping Fe site on the structure and dielectric properties for CuFeO2 ceramic material[J]. Journal of Light Industry, 2019, 34(2): 43-49. doi: 10.3969/j.issn.2096-1553.2019.02.006
Citation: GU Liuting, YE Fengjiao, PENG Ke, et al. Effect of Ti4+ doping Fe site on the structure and dielectric properties for CuFeO2 ceramic material[J]. Journal of Light Industry, 2019, 34(2): 43-49. doi: 10.3969/j.issn.2096-1553.2019.02.006
shu

Ti4+掺杂Fe位对CuFeO2陶瓷材料结构和介电性能的影响

    作者简介:谷留停(1993-),男,河南省漯河市人,郑州轻工业大学硕士研究生,主要研究方向为多铁材料.
  • 郑州轻工业大学 物理与电子工程学院, 河南 郑州 450001
  • 收稿日期: 2018-11-29
基金项目:  国家自然科学基金项目（11675149）；郑州轻工业学院研究生创新基金项目（2017051）

摘要: 以CuO，Fe2O3和TiO2为主要原料，采用固相反应法制备了CuFe1-xTixO2（0 ≤ x ≤ 0.08）陶瓷系列样品，对所得样品的结构、形貌和介电性能进行了表征和分析，并利用内部阻挡层模型（IBLC）对样品的微观结构与介电性能的关联规律进行了物理解释.结果表明，掺杂样品均具有单相铜铁矿结构；适量的Ti4+掺杂能够促进铜铁矿CuFeO2陶瓷样品的晶粒生长，而较大浓度的Ti4+掺杂则会对铜铁矿CuFeO2陶瓷样品的晶粒生长有明显的抑制作用，同时会破坏较为致密的晶体形貌；未掺杂及少量Ti4+掺杂（x=0.005和0.01）样品展现出室温巨介电性能，适当掺杂Ti4+可以有效提高体系的介电性能；IBLC模型可以解释Ti4+掺杂CuFeO2样品的介电机理，即CuFeO2陶瓷体系的微观形貌能明显影响体系的巨介电性能.

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