Ti<sup>4+</sup>掺杂Fe位对CuFeO<sub>2</sub>陶瓷材料结构和介电性能的影响

谷留停; 叶凤娇; 彭科; 代海洋; 刘德伟; 陈镇平

doi:10.3969/j.issn.2096-1553.2019.02.006

March 2019

Article Contents

GU Liuting, YE Fengjiao, PENG Ke, et al. Effect of Ti4+ doping Fe site on the structure and dielectric properties for CuFeO2 ceramic material[J]. Journal of Light Industry, 2019, 34(2): 43-49. doi: 10.3969/j.issn.2096-1553.2019.02.006

Citation: GU Liuting, YE Fengjiao, PENG Ke, et al. Effect of Ti4+ doping Fe site on the structure and dielectric properties for CuFeO2 ceramic material[J]. Journal of Light Industry, 2019, 34(2): 43-49. doi: 10.3969/j.issn.2096-1553.2019.02.006 shu

Effect of Ti⁴⁺ doping Fe site on the structure and dielectric properties for CuFeO₂ ceramic material

College of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450001, China

Received Date: 2018-11-29

Abstract

CuO,Fe2O3 and TiO2 were used as the main raw materials, and CuFe1-xTixO2 (0 ≤ x ≤ 0.08) ceramic series samples were prepared by solid state reaction method. The microstructure, morphology and dielectric properties of the samples obtained were characterized and analyzed. The internal barrier model (IBLC) was used to physically interpret the correlation between the microstructure and dielectric properties of the samples. The results showed that the doped series samples had a single-phase copper iron ore structure. Appropriate amount of Ti4+ doping could promote the grain growth of CuFeO2 ceramic samples, while the larger concentration of Ti4+ significantly inhibited the grain growth of CuFeO2 ceramic samples, and damaged the denser crystal morphology. Undoped and a small amount of Ti4+-doped (x=0.005 and 0.01) CuFeO2 samples exhibited room temperature giant dielectric properties, and proper doping of Ti4+ could effectively improve the dielectric properties of the system; IBLC model could explain the intercalation of Ti4+-doped CuFeO2 samples. The electrical mechanism, that is, the microscopic morphology of the CuFeO2 ceramic system could significantly affect the giant dielectric properties of the system.
- CuFeO₂,
- ceramic material,
- Ti⁴⁺ doping,
- crystal structure,
- micromorphology,
- dielectric property
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