JOURNAL OF LIGHT INDUSTRY

CN 41-1437/TS  ISSN 2096-1553

Volume 33 Issue 6
November 2018
Article Contents
DOU Zhifeng, JIN Yuxiang and GUO Xinfei. Research on transient short-circuit failure analysis and finite element thermoelectric coupling model of IGBT[J]. Journal of Light Industry, 2018, 33(6): 101-108. doi: 10.3969/j.issn.2096-1553.2018.06.012
Citation: DOU Zhifeng, JIN Yuxiang and GUO Xinfei. Research on transient short-circuit failure analysis and finite element thermoelectric coupling model of IGBT[J]. Journal of Light Industry, 2018, 33(6): 101-108. doi: 10.3969/j.issn.2096-1553.2018.06.012 shu

Research on transient short-circuit failure analysis and finite element thermoelectric coupling model of IGBT

  • Received Date: 2018-07-06
  • Aiming at the problem that the traditional thermal network model is not suitable for IGBT short-circuit junction temperature measurement, based on the analysis of the failure mechanism of IGBT in the case of transient short-circuit, the energy value of IGBT short-circuit failure was defined.The evolution law of the critical energy value of IGBT under different initial temperature and different bus voltage was found, and finite element thermoelectric coupling model was established. The simulation results showed that with the increase of DC bus voltage, initial temperature and current density, the short-circuit maintenance time and critical energy value of IGBT would be greatly reduced while the critical temperature point of IGBT failure was independent of the initial temperature; the heat transfer before IGBT failure only reached the solder layer during the short-circuit process, and the maximum temperature point of IGBT was distributed at the boundary of the depleted layer at the instant of short-circuit.
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    1. [1]

      李武华,陈玉香,罗皓泽,等.大容量电力电子器件结温提取原理综述及展望[J].中国电机工程学报,2016,36(13):3546.

    2. [2]

      汪波,罗毅飞,张烁,等.IGBT极限功耗与热失效机理分析[J].电工技术学报,2016,31(12):135.

    3. [3]

      SONG Y,WANG B.Survey on reliability of power electronic systems[J].IEEE Transactions on Power Electronics,2013,28(1):591.

    4. [4]

      徐帅,杨欢,王田刚,等.电力电子变换器可靠性研究[J].北京交通大学学报(自然科学版),2015,39(5):125.

    5. [5]

      WU R,BLAABJERG F,WANG H,et al.Catastrophic failure and fault-tolerant design of IGBT power electronic converters-an overview[C]//IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society,Vienna:IEEE,2013:507-513.

    6. [6]

      赖伟,陈民铀,冉立,等.老化实验条件下的IGBT寿命预测模型[J].电工技术学报,2016,31(24):173.

    7. [7]

      LEFEBVRE S,KHATIR Z,SAINT-EVE F,et al.Experimental behavior of single-chip IGBT and CoolMOS devices under repetitive short-circuit conditions[J].IEEE Transactions on Electron Devices,2005,52(2):2763.

    8. [8]

      汪波,胡安,唐勇,等.IGBT电压击穿特性分析[J].电工技术学报,2011,26(8):145.

    9. [9]

      窦智峰,翟朝伟,崔光照,等.IGBT现场失效短路结温测量方法研究[J].轻工学报,2017,32(4):73.

    10. [10]

      AMMOUS A,AMMOUS K,MOREL H,et al.Electro-thermal modeling of IGBTs:application to short-circuit conditions[J].IEEE Transactions on Power Electronics,2000,15(4):778.

    11. [11]

      RACITI A,MUSUMECI S,CRISTALDI D.Modeling and simulation of IGBT thermal behavior during a short circuit power pulse[C]//2015 International Conference on Clean Electrical Power (ICCEP),Taormina:IEEE,2015:542-547.

    12. [12]

      CLEMENTE S.Transient thermal response of power semiconductors to short power pulses[J].IEEE Transactions on Power Electronics,1993,8(4):337.

    13. [13]

      唐云宇,林燎源,马皓.一种改进的并联IGBT模块瞬态电热模型[J].电工技术学报,2017,32(12):88.

    14. [14]

      唐勇,汪波,陈明.IGBT开关瞬态的温度特性与电热仿真模型[J].电工技术学报,2012,27(12):146.

    15. [15]

      SANO K,HAYASHI K,KAWAFUJI H,et al.Ultra-small compact transfer molded package for power modules[C]//200858th Electronic Components and Technology Conference,Lake Buena Vista:IEEE,2008:1832.

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