JOURNAL OF LIGHT INDUSTRY

CN 41-1437/TS  ISSN 2096-1553

具有择优取向的GaN粉末的制备与性能研究

康利平 王伶俐 王海燕 张晓冬 王永强

康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
引用本文: 康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
Citation: KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006

具有择优取向的GaN粉末的制备与性能研究

  • 基金项目: 国家自然科学基金项目(51302250);郑州市科技局前沿科技研究与发展项目(141PQYJS552);郑州轻工业学院校内科研基金项目(2013XJJ010)

  • 中图分类号: TB34

Research on preparation and performance of Gallium nitride powder with preferred orientation

  • Received Date: 2017-03-01
    Available Online: 2017-09-15

    CLC number: TB34

  • 摘要: 采用管式炉通以流动氨气煅烧β-Ga2O3的方法制备六方纤锌矿GaN,利用XRD,SEM,TEM对所制备的GaN的结构、形貌进行表征和分析,使用荧光光度计采集GaN的光致发光光谱进行发光性能研究.结果表明,GaN具有(002)择优取向,其颗粒外形和尺寸均与原料相似,系由几十纳米的晶片团聚而成的棒状颗粒所组成;GaN的近带边发射峰为346 nm(3.584 eV),相比较块材的近带边发射峰有19 nm(187 meV)的蓝移.
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  • 收稿日期:  2017-03-01
  • 刊出日期:  2017-09-15
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康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
引用本文: 康利平, 王伶俐, 王海燕, 等. 具有择优取向的GaN粉末的制备与性能研究[J]. 轻工学报, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006
Citation: KANG Li-ping, WANG Ling-li, WANG Hai-yan, et al. Research on preparation and performance of Gallium nitride powder with preferred orientation[J]. Journal of Light Industry, 2017, 32(5): 42-48. doi: 10.3969/j.issn.2096-1553.2017.5.006

具有择优取向的GaN粉末的制备与性能研究

  • 郑州轻工业学院 物理与电子工程学院, 河南 郑州 450002
基金项目:  国家自然科学基金项目(51302250);郑州市科技局前沿科技研究与发展项目(141PQYJS552);郑州轻工业学院校内科研基金项目(2013XJJ010)

摘要: 采用管式炉通以流动氨气煅烧β-Ga2O3的方法制备六方纤锌矿GaN,利用XRD,SEM,TEM对所制备的GaN的结构、形貌进行表征和分析,使用荧光光度计采集GaN的光致发光光谱进行发光性能研究.结果表明,GaN具有(002)择优取向,其颗粒外形和尺寸均与原料相似,系由几十纳米的晶片团聚而成的棒状颗粒所组成;GaN的近带边发射峰为346 nm(3.584 eV),相比较块材的近带边发射峰有19 nm(187 meV)的蓝移.

English Abstract

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